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1

Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence

Brazzini, Tommaso, Casbon, Michael A., Sun, Huarui, Uren, Michael J., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, Blanck, Hervé, Kuball, Martin

Journal:

Microelectronics Reliability

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

2

Industrial GaN FET technology

Blanck, Hervé, Thorpe, James R., Behtash, Reza, Splettstößer, Jörg, Brückner, Peter, Heckmann, Sylvain, Jung, Helmut, Riepe, Klaus, Bourgeois, Franck, Hosch, Michael, Köhn, Dominik, Stieglauer, Herman

Journal:

International Journal of Microwave and Wireless Technologies

Year:

2010

Language:

english

File:

PDF, 1.21 MB

english, 2010

3

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Axelsson, Olle, Gustafsson, Sebastian, Hjelmgren, Hans, Rorsman, Niklas, Blanck, Herve, Splettstoesser, Jorg, Thorpe, Jim, Roedle, Thomas, Thorsell, Mattias

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.00 MB

english, 2016

4

Reliability studies on GaN HEMTs with sputtered Iridium gate module

Richard Lossy, Hervé Blanck, Joachim Würfl

Journal:

Microelectronics Reliability

Year:

2012

Language:

english

File:

PDF, 604 KB

english, 2012

5

[IEEE 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2015.9.7-2015.9.8)] 2015 10th European Microwave Integrated Circuits Conference (EuMIC) - Robustness investigation by load pull measurement of industrial 0.25-μm AlGaN-GaN HEMTs

Chang, Christophe, Nobre-Santos, Arthur, Lambert, Benoit, Floriot, Didier, Grunenputt, Jan, Blanck, Herve

Year:

2015

Language:

english

File:

PDF, 472 KB

english, 2015

6

Hot-Electron Electroluminescence Under RF Operation in GaN-HEMTs: A Comparison Among Operational Classes

Brazzini, Tommaso, Casbon, Michael A., Uren, Michael J., Tasker, Paul J., Jung, Helmut, Blanck, Herve, Kuball, Martin

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.52 MB

english, 2017

7

Molecular Cloning, cDNA Analysis, and Localization of a Monomer of the N-Acetylglucosamine-Specific Receptor of the Thyroid, NAGR1, to Chromosome 19p13.3-13.2

Olivier Blanck, Claire Perrin, Hassan Mziaut, Hervé Darbon, Marie Geneviève Mattei, Raymond Miquelis

Journal:

Year:

1994

File:

PDF, 621 KB

1994

8

Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface

Helmut Jung, Reza Behtash, James R. Thorpe, Klaus Riepe, Franck Bourgeois, Hervé Blanck, Andrey Chuvilin, Ute Kaiser

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 278 KB

english, 2009

9

Output capacitance on GaN HEMTs in correlation to its transistor geometry and sheet resistance

Jung, Helmut, Abele, Peter, Grünenpütt, Jan, Hosch, Michael, Schauwecker, Bernd, Blanck, Hervé, Rödle, Thomas, Schäfer, Michael

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 661 KB

english, 2014

10

Low-threshold GaAs/AlGaAs graded-index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide-masked Si substrates

Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 620 KB

english, 1990

11

Transient Thermoreflectance for Gate Temperature Assessment in Pulse Operated GaN-Based HEMTs

Martin-Horcajo, Sara, Pomeroy, James W., Lambert, Benoit, Jung, Helmut, Blanck, Herve, Kuball, Martin

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 1.27 MB

english, 2016

12

Improvement of Ohmic Contact for InAlGaN/AlN/GaN HEMTs with Recess Etching

Riedmüller, Sandra, Steinmann, Claudia, Grünenpütt, Jan, Scholz, Ferdinand, Blanck, Hervé

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 898 KB

english, 2018

13

Boron Implantation into G a A s / G a 0.5I n 0.5P Heterostructures

Henkel, Achim, Delage, Sylvain Laurent, Forte-Poisson, Marie Antoinette di, Blanck, Hervé, Hartnagel, Hans Ludwig

Journal:

Japanese Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 560 KB

english, 1997

14

Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates

Arnaud, Wilk, Lijadi, Melania, Langer, Robert, Bove, Philippe, Thorpe, James, Blanck, Hervé, Hoel, Virginie, Defrance, Nicolas, DeJaeger, Jean-Claude

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 583 KB

english, 2008

15

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-Î¼m AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

Rzin, Mehdi, Meneghini, Matteo, Rampazzo, Fabiana, Zhan, Veronica Gao, Marcon, Daniele, Grunenputt, Jan, Jung, Helmut, Lambert, Benoit, Riepe, Klaus, Blanck, Herve, Graff, Andreas, Altmann, Frank, Sim

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 2.29 MB

2020

16

Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation

Brazzini, Tommaso, Casbon, Michael A., Sun, Huarui, Uren, Michael J., Lees, Jonathan, Tasker, Paul J., Jung, Helmut, Blanck, Hervé, Kuball, Martin

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.13 MB

english, 2015

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